Mems structure for flow sensor

ABSTRACT

A MEMS based flow sensor is disclosed which generally incorporate isolation between a sensing structure and the sensed media. An internal flow channel can be configured by attaching a backing structure with flow openings to the back of the sensing structure. The sensing structure can be composed of a insulating layer with heating element and a dual sensing element which comprises of resistive thin films positioned in a Wheatstone bridge configuration over a backside cavity. The dual sensing element and its associated wirebonds can be isolated from the sensing media by directing the fluid through the internal flow channel. The completed sensing structure can be over packaged with standard processes such as epoxies and seals.

TECHNICAL FIELD

Embodiments are generally related to sensor methods and systems.Embodiments are also related to microelectromechanical systems (MEMS)and, more particularly, to MEMS structures. Embodiments are also relatedto flow sensors for measuring the mass flow of air or other fluid.

BACKGROUND OF THE INVENTION

Microelectromechanical systems (MEMS) include mechanical and electricalcomponents having dimensions in the order of microns or smaller. MEMSstructures are used in numerous applications including microsensors andmicroactuators. Microsensors can be used to sense and/or measurepressure, flow, acceleration, temperature and stress, amongst otherconditions. A microsensor functions by generating electrical signals inresponse to an input condition such as flow, pressure or temperature onthe sensor. The sensor may be calibrated such that the electrical signaland, thus the movement of the mechanical component, can be correlated tothe condition.

The ability to detect the presence of air flow can be a key element ofmany systems and devices. MEMS based flow sensors can be utilized formeasuring flow rates in a variety of commercial, industrial and medicalapplications. Various medical, process, and industrial applications,ranging from portable ventilators supplying pressurized air orrespiratory treatments to large-scale processing plants in a chemicalplant require the use of flow sensors. In such applications, flowcontrol is an inherent aspect of proper operation, which can be achievedin part by utilizing flow sensors to measure the flow rate of fluidwithin a flow system. The flow sensor is typically deployed by placingit directly in the flow stream, which makes the flow sensor wire bonds,or sensing elements damaged by debris, lint, or from patientmishandling.

The problem with prior art flow sensor arrangements and relationships isthat the wire bond pads and active regions of the sense die end upfacing the sensed media. Water or other contaminants can attack thesense die and its wire bonds. Additionally, conventional flow sensorconfigurations lack the ability to sense ultra-low flow liquid.

Based on the foregoing it is believed that a need exists for an improvedMEMS based flow sensor for protecting the sense die and its wirebondsfrom the flow stream, by attaching the flow channel structure to thebackside of the sense die. It is believed that by utilizing the flowsensor described in greater detail herein, ultra-low flow liquid canpotentially be sensed.

BRIEF SUMMARY

The following summary is provided to facilitate an understanding of someof the innovative features unique to the embodiments disclosed and isnot intended to be a full description. A full appreciation of thevarious aspects of the embodiments can be gained by taking the entirespecification, claims, drawings, and abstract as a whole.

It is, therefore, one aspect of the present invention to provide forimproved sensor methods and systems.

It is another aspect of the present invention to provide for improvedMEMS structure for flow sensors.

The aforementioned aspects and other objectives and advantages can nowbe achieved as described herein. A MEMS-based flow sensor is disclosedwhich generally incorporate isolation between a sensing structure andthe sensed media. An internal flow channel can be configured byattaching a backing structure with an airflow opening to the back of thesensing structure. The sensing structure is composed of a heatingelement and a dual sensing element which comprises of resistive thinfilms positioned in a Wheatstone bridge configuration. The dual sensingelements and its associated wirebond pads can be isolated from thesensing media by directing the liquid through the internal flow channel.The completed sensing structure can be over packaged with standardprocesses such as epoxies and seals.

The wire bond pads can be used for electrical connection of theresistive thin films and the dual sensing element through electricalconductive leads extending on the backing structure. The backingstructure can be placed on a planar surface. The backing structure canbe etched silicon, machined or molded glass or molded plastic. The fluidcan be passed through the flow channel hence wire bond pads are isolatedfrom the flow channel in order to sense ultra-low flow fluid. The dualsensing element can be assembled utilizing standard wirebond pads andwirebonding methods.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying figures, in which like reference numerals refer toidentical or functionally-similar elements throughout the separate viewsand which are incorporated in and form a part of the specification,further illustrate the embodiments and, together with the detaileddescription, serve to explain the embodiments disclosed herein.

FIG. 1 illustrates a perspective view of a MEMS flow sensor, which canbe adapted for use in implementing a preferred embodiment;

FIG. 2 illustrates a perspective view of MEMS flow sensor with a flowchannel formed into a top and backing structure layers, in accordancewith a preferred embodiment;

FIG. 3 illustrates a cross-sectional, side view of the MEMS flow sensor,in accordance with a preferred embodiment; and

FIG. 4 illustrates a detailed flow chart of operations illustratinglogical operational steps of a method for providing improved MEMS basedflow sensor, in accordance with a preferred embodiment.

DETAILED DESCRIPTION

The particular values and configurations discussed in these non-limitingexamples can be varied and are cited merely to illustrate at least oneembodiment and are not intended to limit the scope thereof.

Referring to FIG. 1 a perspective view of MEMS flow sensor 100 isillustrated, in accordance with a preferred embodiment. The flow sensor100 generally includes an isolation layer 138 formed of silicon nitrideor other thermally and electrically insulating material on planarsurface 118 of the upper structure 120. The upper structure 120 can beformed of silicon and is attached to a lower structure 122 which can beformed of any combination of silicon, glass and/or plastic. A sensingstructure 102 is deposited on isolation layer 138. The upper structure120 and lower structure 122 have tunneled features forming a flowchannel 130 therein. The flow sensor 100 has a unique silicon chip basedon advanced microstructure technology. The sensing structure 102 can becomposed of a heating element 128 and sensing elements 140 and 142formed on the isolation layer 138. The dual sensing elements 140 and 142can be positioned on both sides of the central heating element 128indicate flow direction as well as flow rate.

The heating element 128 and sensing elements 140 and 142 which comprisesof temperature sensitive resistive thin films are preferably positionedin a full Wheatstone bridge configuration with the addition of sensingelements 144 and 146. The sensing structure 102 is deposited on orwithin the isolation plate 138 located over a precisely dimensioned flowchannel 130 to provide a repeatable flow response. The isolation layer138 can be deposited in layers so that sensing structure 102 may beencased within the layers to be protected from the media on the side offlow channel 130 and protected from the environment on the oppositeside. The plate structure provides a sensitive and fast response to theflow of air or other fluid passing through the flow channel 130.

Electrical connection can be provided for connecting the ends of thethin film resistors sensing structure 102 to circuitry connection sitesfor associated sensor circuitry. The wire bond pads 106, 108, 110, 112,114, 116, 124, 126, 132, and 134 can be used for electrical connectionof the sensing structure 102. As an example, resistive thin film sensingelement 144 may be electrically connected through the first electricalconductive lead 104 extending on or within the isolation layer 138placed on the planar surface 118. Other electrical connections are madein the same manner. Thus, the fluid can be passed through the flowchannel 130 hence wire bond pads 106, 108, 110, 112, 114, 116, 124, 126,132, and 134 are isolated from the flow channel 130.

The electrical leads such as 104 including their associated electricalconnections and wire bond pads preferably are formed by any of the wellknown metalization techniques currently in commercial use for theproduction of mass air flow sensors, integrated circuits and the like.Preferably the leads are either gold, preferably over a chromiumadhesion layer, or aluminum. Alternative metals will be apparent tothose skilled in the art in view of the present disclosure forparticular applications in which the sensor can be used.

Referring to FIG. 2 a perspective view of MEMS flow sensor 100 betterillustrating the flow channel 130 formed within the upper structure 120and lower structure 122, backing surface, and the isolation layer 138,in accordance with a preferred embodiment. Note that in FIGS. 1-4,identical or similar blocks and elements are generally indicated byidentical reference numerals. The lower structure 122 can be etchedsilicon, machined or molded glass or molded plastic with features suchthat when bonded to the upper structure 120 having an etched channel 130and isolation layer 138, a thin isolation plate is formed for locatingthe sensing structure 102. The fluid can be directed through the flowchannel 130 and avoid any contact with the wire bond pads 106-116, 132,134, 124 and 126 as shown in FIG. 1.

Referring to FIG. 3 a sectional view of the MEMS flow sensor 100 isillustrated, in accordance with a preferred embodiment. The flow sensor100 operates on the theory of heat transfer. The resistive thin film140, 142, and 128 can be deposited on upper surface of the isolationlayer 138. Further layers of silicon nitride may be deposited overresistive thin films 140, 142, and 128 to encase on both sides forprotection from media and the environment. The resistive film 140 and142 can be formed in accordance with well-known metalization techniquesof any material having suitable thin film resistance properties andsuitable deposition characteristics. Preferably the resistive film 144and 146 can be formed of platinum.

The flow sensor 100 has a unique silicon chip based on advancedmicrostructure technology. The heater 128 and the sensing elements 140and 142 can be deposited on a thin-film, thermally isolated platestructure. The plate structure provides a sensitive and fast response tothe flow of fluid through the flow channel 130. The dual sensingelements 140 and 142 positioned on both sides of a central heatingelement 128 indicate flow direction as well as flow rate. An outputvoltage varies in proportion to the fluid flow. The sensing elements 140and 142 can be assembled utilizing standard wirebond pads andwirebonding methods. Also, a variety of materials and processes can beused to build the backing channel structure, which lends to a variety ofoptions to optimize performance of the device.

Referring to FIG. 4 a detailed flow chart of operations illustratinglogical operational steps of a method for providing improved MEMS basedflow sensor 400 is illustrated, in accordance with a preferredembodiment. Note that in FIGS. 1-4, identical or similar blocks andelements are generally indicated by identical reference numerals. Asindicated at block 410, a backing structure 122 with two openings can beconfigured. Next, as depicted at block 420, the upper sensing structure120 with isolation layer 138, heating element 128 and dual sensingelement 140 and 142 can be configured. Thereafter, as illustrated atblock 430, electrical connection for the heating element 128 and thesensing elements 140 and 142 can be provided through electricalconductive leads such as 104 and wirebond pads 106-116, 132, 134, 124and 126 as shown in FIG. 1.

Block 440 describes the etching of the backside of the upper structureto expose the isolation layer and form a platelike structure whichcontains the heater 128 and sensing elements 140 and 142. The structureis, in effect, suspended over the upper section of the flow channel.

The completed internal flow channel 130 can be configured by attachingthe backing structure 138 to the back of the sensing structure 102, asdescribed at block 450. The completed sensing structure 100 can beoverpackaged with standard processes such as epoxies and seals, as shownat block 460. Finally as indicated at block 470, fluid can be directedthrough internal flow channel 130 in order to isolate wirebond pads suchas 106 and 108 and the sensing elements 140 and 142 from the media. Theheating element 128 transfers heat though the media and the platestructure. As media passes through the internal flow channel thedifference in temperature of the sensing elements 140 and 142 willinduce a resistance change that provides an output which can becorrelated to mass flow. The resulting assembly can then be packaged asrequired.

The sensing structure 102 can be overpackaged utilizing standardprocesses such as epoxies and seals. Typically, the dual sensing element140 and 142 and the heating element 128 are fabricated by depositingfilms of platinum by known metal deposition techniques, such as physicalvapor deposition or sputtering. The electrically conductive leads 104,136 and 148 are deposited using metal deposition techniques known in theart. The small size and thermal isolation of the microbridge flow sensor100 are responsible for the extremely fast response and high sensitivityto flows. The flow sensor 100 can be more sensitive at very low flowsand can potentially be utilized to sense ultra-low flow liquid.Similarly, the wirebonds and circuitry can be isolated from the flowstream, hence the microstructure is protected from damage.

It will be appreciated that variations of the above-disclosed and otherfeatures and functions, or alternatives thereof, may be desirablycombined into many other different systems or applications. Also thatvarious presently unforeseen or unanticipated alternatives,modifications, variations or improvements therein may be subsequentlymade by those skilled in the art which are also intended to beencompassed by the following claims.

1. A MEMS flow sensor, comprising: a backing structure having twoopenings for fluid flow formed there through; a sensing structureincluding an electrically insulating topside layer on a substrate withbackside cavity including a heater element and a plurality of dualsensing elements disposed on said electrically insulating topside layer,said topside layer further comprising of a plurality of resistive thinfilms wherein said plurality of dual sensing elements measure a flow offluid and wherein two of said plurality of dual sensing elements can belocated on both sides of said heating element to indicate flow of fluiddirection; a plurality of layers of silicon nitride deposited over saidresistive thin films to provide protection from media and theenvironment; and a flow channel formed by bonding said sensing structureto said backing structure wherein said flow of fluid is directed throughsaid flow channel in order to isolate a plurality of wirebonds and saidplurality of dual sensing elements from said flow channel.
 2. The flowsensor of claim 1 further comprising: a plurality of electricalconductive leads extending from said sensing structure from said heaterelement and said plurality of dual sensing elements to said plurality ofwirebonds.
 3. The flow sensor of claim 2, wherein said plurality ofelectrical conductive leads and said plurality of wirebonds provide anelectrical connection for said heater element and said plurality of dualsensing elements.
 4. The flow sensor of claim 2 wherein said pluralityof resistive thin films comprise metal selected from nickel andplatinum.
 5. The flow sensor of claim 2 wherein said plurality ofresistive thin films are connected in a Wheatstone bridge configuration.6. The flow sensor of claim 1 wherein said sensing structure isoverpackaged utilizing standard processes comprising epoxies and seals.7. The sensor of claim 1 wherein said backing structure, said sensingstructure and said flow channel are arranged together to comprise acomplete assembly.
 8. The MEMS flow sensor of claim 1 wherein saidbacking structure is selected from the group comprising etched silicon,a fabricated glass, and a molded plastic.
 9. A MEMS flow sensor,comprising: a backing structure having two openings for fluid flowformed there through and a channel disposed between the openings; asensing structure including a heater element and a plurality of dualsensing elements said sensing structure further comprising of aplurality of resistive thin films wherein said plurality of dual sensingelements measures a flow of fluid and wherein two of said plurality ofdual sensing elements can be located on both sides of said heatingelement to indicate flow of fluid direction; a plurality of layers ofsilicon nitride deposited over said resistive thin films to provideprotection from media and the environment; a plurality of electricalconductive leads extending onto said sensing structure from said heaterelement and said plurality of dual sensing elements to said plurality ofwire bond; and a flow channel formed by bonding said sensing structureto the said backing structure wherein said flow of fluid is directedthrough said flow channel in order to isolate a plurality of wire bondsand said plurality of dual sensing elements from said flow channel. 10.The flow sensor of claim 9, wherein said plurality of electricalconductive leads and said plurality of wire bonds provides an electricalconnection for said heater element and said plurality of dual sensingelements.
 11. The flow sensor of claim 9 wherein said plurality ofresistive thin films comprises metal selected from nickel and platinum.12. The flow sensor of claim 9 wherein said plurality of resistive thinfilms are connected in a Wheatstone bridge configuration.
 13. The flowsensor of claim 9 wherein said sensing structure is overpackagedutilizing standard processes comprising epoxies and seals.
 14. Thesensor of claim 9 wherein said backing structure, said sensing structureand said flow channel are assembled together into a complete assembly.15. The MEMS flow sensor of claim 9 wherein said backing structure isselected from the group comprising etched silicon, a fabricated glass,and a molded plastic.
 16. A MEMS flow sensor, comprising: a backingstructure having two openings for fluid flow formed there through; asensing structure including a backside etched channel and topsideelectrically insulating layer with heater element and a plurality dualsensing element, said sensing structure further comprising a pluralityof resistive thin films further comprised of metals selected from nickeland platinum, wherein said plurality of dual sensing elements measure aflow of fluid and wherein two of said plurality of dual sensing elementscan be located on both sides of said heating element to indicate flow offluid direction; a plurality of layers of silicon nitride deposited oversaid resistive thin films to provide protection from media and theenvironment; and a flow channel formed by bonding said sensing structureto the back of said backing structure wherein said flow of fluid isdirected through said flow channel in order to isolate a plurality ofwire bonds and said plurality of dual sensing elements from said flowchannel.
 17. The flow sensor of claim 16 further comprising: a pluralityof electrical conductive leads extending from said sensing structurefrom said heater element and said plurality of dual sensing elements tosaid plurality of wire bonds.
 18. The flow sensor of claim 17, whereinsaid plurality of electrical conductive leads and said plurality of wirebonds provides an electrical connection for said heater element and saidplurality of dual sensing elements.
 19. The flow sensor of claim 16wherein said plurality of resistive thin films are connected in aWheatstone bridge configuration.
 20. The MEMS flow sensor of claim 1wherein said backing structure is selected from a group comprisingetched silicon, a fabricated glass, and a molded plastic.